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1.7 kV SiC Half Bridge Module Simplifies Two-Level Topologies

Oct. 21, 2014
Cree’s all-silicon carbide (SiC) 1.7 kV half-bridge module has 8 mΩ on-resistance and is encased in a standard 62-mm housing.

Cree’s all-silicon carbide (SiC) 1.7 kV half-bridge module has 8 mΩ on-resistance and is encased in a standard 62-mm housing. It is powered by Cree’s C2M large area SiC chip technology and allows users to reduce the size and cost of magnetic and cooling elements while still achieving efficiency and reliability. The module enables simplified two-level topologies that are feasible at higher frequencies, thus eliminating the need to invest in complex, multi-level silicon-based solutions. High power density simplifies the implementation of modular system designs and enables low mean time to repair for high overall system availability. It is ideal for high power motor drive and grid-tie inverter applications.

Cree, 4600 Silicon Drive, Durham, North Carolina 27703, (919)-313-5300

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